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General specifications

Energy range:	10 - 135 eV
Flux (91 eV):	2.4 x 10¹⁵ ph / s / cm² / 2.8%BW / 0.3A
Spot size:	4 mm x 4 mm

Table 1: General beamline specifications

The X-ray Interference Lithography (XIL) beamline provides spatially coherent beam in the Extreme Ultraviolet (EUV) energy range. The XIL beamline is built as a branch on the SIS beamline. The light from the undulator source is filtered by a pinhole spatial filter to deliver spatially coherent illumination in the custom designed exposure chamber.

Click here for information on the applications of the XIL technique.

Because of the energy range the technique is sometimes called Extreme-Ultraviolet Interference Lithography (EUV-IL).